0x211 Semiconductor
Foundation
Electrical conductivity of Semiconductor is between medal and insulator
Properties
- amplification
- switch
- energy transformation
Material - Group 14: Silicon, Germanium
Band
- Conduction band: electrons distributed here for medals
- Valence band: electrons distributed here for insulators
Doping
- N type: introducing redundent electron (n means negative, not the atom), examples are Phosphorus, Arsenic
- P type: electron hole (p means positive, not the atom), examples are Boron, Gallium
Transistor
This documentary covers the early history of invention of transitor.
Diode
p-n junction
- forward bias: electron moves when voltage > 0.7V
- reverse bias: reverse voltage will widen energy of depletion layer
Bipolar junction transistor
Invented by Shockley, Bardeen, Brattain at Bell Labs in 1947. (Nobel Prize awarded in 1956)
This can be seen as two Diode connected reversely.
NPN or PNP
Component
- Base: switch
- Emitter
- Collector
MOSFET
Feature
- Little energy waste compared with Bipolar
- Building blocks of SRAM and CPU
- Scalable
Component
- Gate: switch
- Source
- Drain